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IPT007N06N

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IPT007N06N

Transistor Polarity : N-Channel

Technology : Si

Id - Continuous Drain Current : 300 A

Mounting Style : SMD/SMT

Tradename : OptiMOS

Minimum Operating Temperature : - 55 C

Package / Case : HSOF-8

Maximum Operating Temperature : + 175 C

Channel Mode : Enhancement

Vds - Drain-Source Breakdown Voltage : 60 V

Packaging : Reel

Vgs th - Gate-Source Threshold Voltage : 2.1 V

Product Category : MOSFET

Rds On - Drain-Source Resistance : 660 uOhms

Number of Channels : 1 Channel

Vgs - Gate-Source Voltage : +/- 20 V

Qg - Gate Charge : 287 nC

Manufacturer : Infineon Technologies

Description : MOSFET DIFFERENTIATED MOSFETS

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The IPT007N06N,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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