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Product Category : MOSFET
Vgs (Max) : ±30V
Current - Continuous Drain (Id) @ 25°C : 20A (Ta)
FET Type : N-Channel
Mounting Type : Through Hole
Gate Charge (Qg) (Max) @ Vgs : 27nC @ 10V
Manufacturer : Toshiba
Minimum Quantity : 1
Drive Voltage (Max Rds On, Min Rds On) : 10V
Operating Temperature : 150°C (TJ)
FET Feature : -
Series : DTMOSII
Input Capacitance (Ciss) (Max) @ Vds : 1470pF @ 10V
Supplier Device Package : TO-220SIS
Part Status : Active
Packaging : Tube
Rds On (Max) @ Id, Vgs : 190 mOhm @ 10A, 10V
Power Dissipation (Max) : 45W (Tc)
Package / Case : TO-220-3 Full Pack
Technology : MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id : 5V @ 1mA
Drain to Source Voltage (Vdss) : 600V
Description : MOSFET N-CH 600V 20A TO-220SIS
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