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SQJ479EP-T1_GE3

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Photo Detectors - Logic Output [1]
Photoelectric, Industrial [1]
NTC Thermistors [40]

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SQJ479EP-T1_GE3

Transistor Polarity : P-Channel

Technology : Si

Id - Continuous Drain Current : - 32 A

Mounting Style : SMD/SMT

Minimum Operating Temperature : - 55 C

Package / Case : PowerPAK-SO-8L-4

Maximum Operating Temperature : + 175 C

Channel Mode : Enhancement

Vds - Drain-Source Breakdown Voltage : - 80 V

Packaging : Reel

Vgs th - Gate-Source Threshold Voltage : - 2.5 V

Product Category : MOSFET

Rds On - Drain-Source Resistance : 27.5 mOhms

Number of Channels : 1 Channel

Vgs - Gate-Source Voltage : +/- 20 V

Qg - Gate Charge : 150 nC

Manufacturer : Siliconix / Vishay

Description : MOSFET P Ch -80Vds 20Vgs AEC-Q101 Qualified

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The SQJ479EP-T1_GE3,from Siliconix / Vishay,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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